| PART |
Description |
Maker |
| DSK9K1208U0A K9K1208U0A-YCB0 K9K1208U0A-YIB0 DS_K9 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
TV 16C 16#16 SKT RECP 6400 × 8位NAND闪存
64M x 8 Bit NAND Flash Memory Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| TC58V32FT |
32M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| TC58128FTI |
128M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| TC58V64DC |
16M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| 4376 M27V401 M27V401-200B1TR M27V401-200B6TR M27V4 |
4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 32-Bit Buffers/Drivers With 3-State outputs 96-LFBGA -40 to 85
Quadruple 2-Input Positive-NAND Gates 14-SOIC 0 to 70
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 48-TSSOP -40 to 85
4 Mbit (512Kb x8) Low Voltage UV EPROM and OTP EPROM
From old datasheet system
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| TC58256FT |
CMOS NAND EPROM
|
Toshiba
|
| K9K1208Q0C |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
|
Samsung semiconductor
|
| K9F1208U0A K9F1216U0A |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
|
| K9K1208U0C K9K1208Q0C K9K1216D0C K9K1216Q0C K9K121 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MBM30LV0064 MBM30LV0064-PFTN MBM30LV0064-PFTR |
FLASH MEMORY 64M (8M x 8) BIT NAND-type
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
|
| TC58NS128BDC |
128 MBit CMOS NAND EPROM
|
Toshiba
|
